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ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module
Features
CIRCUIT TECHNOLOGY
www.aeroflex.com/act1.htm s Ready/Busy output (RY/BY) - Hardware method for s 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One
MCM Package s Overall Configuration is 2M x 32 s +5V Power Supply / +5V Programing Operation s Access Times of 90, 120 and 150 ns s Erase/Program Cycles - 100,000 Minimum s Sector erase architecture (Each Die) q 32 uniform sectors of 64 Kbytes each q Any combination of sectors can be erased. Also supports full chip erase q Sector group protection is user definable s Embedded Erase Algorithims - Automatically pre-programs and erases the die or any sector s Embedded Program Algorithims - Automatically programs and verifies data at specified address
detection of program or erase cycle completion s Hardware RESET pin - Resets internal state machine to the read mode s Erase Suspend/Resume - Supports reading or programming data to a sector not being erased s Packaging - Hermetic Ceramic q 68 Lead, .94" x .94" x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint) s Internal Decoupling Capacitors for Low Noise Operation s Commercial, Industrial and Military Temperature Ranges s MIL-PRF-38534 Compliant MCMs Available
Pin Description
Block Diagram - CQFP(F18)
Standard Configuration CE1 RESET WE OE A0 - A20 RY/BY 2Mx8 8 I/O0-7 2Mx8 8 I/O8-15 2Mx8 8 I/O16-23 2Mx8 8 I/O24-31 CE2 CE3
General Description
Utilizing AMD's Sector Erase Flash Memory Die, the ACT-F2M32A is a high speed, 64 megabit CMOS flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications. The ACT-F2M32A consists of four high-performance AMD Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each). The command register is written by bringing WE to a logic low level (VIL), while CE is low and OE is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable (OE) being logically active. Access time grades of 90ns, 120ns and 150ns maximum are standard.
I/O0-31 CE4 A0-20 WE CE1-4 OE RY/BY RESET VCC GND NC
Data I/O Address Inputs Write Enables Chip Enables Output Enable Ready/Busy Reset Power Supply Ground Not Connected
Block Diagram - CQFP(F18)
Optional Configuration WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4 RESET OE A0 - A20 Pin Description I/O0-31 A0-20 WE1-4 CE1-4 OE 2Mx8 2Mx8 2Mx8 2Mx8 RESET VCC 8 I/O0-7 8 I/O8-15 8 I/O16-23 8 I/O24-31 GND NC Data I/O Address Inputs Write Enable Chip Enables Output Enable Reset Power Supply Ground Not Connected
eroflex Circuit Technology - Advanced Multichip Modules (c) SCD1666A REV A 9/12/97
General Description, Cont'd,
The ACT-F2M32A is packaged in a hermetically sealed co-fired ceramic 68 lead, .94" SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment temperature range of -55C to +125C. The ACT-F2M32A can be programmed (both read and write functions) in-system using the +5.0V VCC power supply. A 12.0V VPP is not required for programming or erase operations. The end of program or erase is detected by the RY/BY pin, Data Polling of DQ7, or by the Toggle bit (DQ6). The ACT-F2M32A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be terminated. Each block can be independently erased and programmed 100,000 times at +25C.
For Detail Information regarding the operation of the Am29F016 Sector Erase Flash Memory, see the AMD datasheet (Publication 18805).
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
Absolute Maximum Ratings
Parameter Case Operating Temperature Range Storage Temperature Range Voltage with Respect to GND (All pins except A9) Voltage on Pins A9, OE, RESET
(3) (2) (1) (1)
Range -55 to +125 -65 to +150 -2.0 to +7.0 -2.0 to +13.5 -2.0 to +7.0 200
Units C C V V V mA
Vcc Supply Voltage with Respect to Ground Output Short Circuit Current
Notes: 1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on input/output pins is VCC + 0.5V, which may overshoot to VCC + 2.0V for periods up to 20ns. 2. Minimum DC input voltage on A9 ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may overshoot GND to -2.0V for periods up to 20ns. Maximum DC input voltage on A9 is +12.5V which may overshoot to 14V for periods up to 20ns. 3. No more than one output shorted to ground for no more than 1 second. NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating only; functional operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.
Recommended Operating Conditions
Symbol VCC VIH VIL TC Parameter 5V Power Supply Voltage (10%) Input High Voltage (CMOS) Input Low Voltage Operating Temperature (Military) Minimum +4.5 0.7 x VCC -0.5 -55 Maximum +5.5 Vcc + 0.3 +0.8 +125 Units V V V C
Capacitance
(f = 1MHz, TC = 25C, Standard Configuration)
Symbol CAD COE CCE CRESET CWE CRY/BY CI/O
Parameter A0 - A20 Capacitance OE Capacitance CE Capacitance RESET Capacitance WE Capacitance RY/BY Capacitance I/O0 - I/O31 Capacitance
Maximum 50 50 20 50 60 50 20
Units pF pF pF pF pF pF pF
Capacitance Guaranteed by design, but not tested.
DC Characteristics - CMOS Compatible
(TC = -55C to +125C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter Input Load Current A9 Leakage Current Output Leakage Current Vcc Active Read Current Vcc Active Program/Erase Current (1) Vcc Standby Current Vcc Standby Current (Reset) Output Low Voltage Output High Voltage
Sym IIL ILIT ILO ICC1 ICC2 ICC3 ICC4 VOL VOH1 VOH2
Conditions VCC = VCCMax., VIN = VCC or GND VCC = VCCMax., A9 = +12V VCC = VCCMax., VIN = GND to VCC CE = VIL, OE = VIH CE = VIL, OE = VIH VCC = VCCMax., CE = RESET = VCC 0.3V VCC = VCCMax., RESET = VCC 0.3V VCC = VCCMin., IOL = 12 mA VCC = VCCMin., IOH = -2.5 mA VCC = VCCMin., IOH = -100 A
Min
Max 10 50 10 160 240 4 4 0.45
Units A A A mA mA mA mA V V V
0.85 x VCC VCC 0.4V 3.2 4.2
Low VCC Lock-Out Voltage
Notes: 1. Not 100% tested.
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VLKO
V
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Characteristics - Write/Erase/Program Operations - WE Controlled
(TC = -55C to +125C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter Parameter Write Cycle Time Address Setup to WE Going Low Address Hold Time from CE High Data Setup to WE Going High Data Hold Time from WE High Output Enable Hold Time Read Recover Time Before Write (OE High to WE Low) CE Setup Time from WE Low CE Hold Time from WE High WE Pulse Width WE Pulse Width High Byte Programming Operation Sector Erase Operation VCC Set-Up Time Rise Time to VID OE Setup Time to WE Active Reset Pulse Width Program/Erase Valid to RY/BY Delay
Notes: 1. Not 100% tested.
Parameter Symbol JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX
90ns Min 90 0 45 45 0 0 10 Max
120ns Min 120 0 50 50 0 0 10 0 0 0 50 20 8 Max
150ns Min 150 0 50 50 0 0 10 0 0 0 50 20 8 Max Units ns ns ns ns ns ns ns ns ns ns ns ns s 15 50 500 4 500 60 Sec s ns s ns ns
Symbol Standard tWC tAS tAH tDS tDH Read Toggle Bit I and Data Polling tOEH tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tVIDR
tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2
0 0 0 45 20 8 15 50 500 4 500 40
15 50 500 4 500 50
tOESP tRP tBUSY
AC Characteristics - Read Only Operations
(TC = -55C to +125C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter Parameter Read Cycle Time
(1)
Parameter Symbol JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX 0
90ns Min 90 90 90 40 20 20 Max
120ns Min 120 120 120 50 30 0 0 30 Max
150ns Min 150 150 150 55 35 0 0 35 Max Units ns ns ns ns ns ns ns 20 s
Symbol Standard tRC tACC tCE tOE tDF tDF tOH tREADY
Address to Output Delay CE to Output Delay OE to Output Delay CE to Output in High Z (1) OE to Output in High Z
(1)
Output Hold from Addresses, CE or OE Change, Whichever Occurs First RESET Low to Read Mode (1)
Notes: 1. Not 100% tested.
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Characteristics - Write/Erase/Program Operations - CE Controlled
(TC = -55C to +125C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter Parameter Write Cycle Time (1) Address Setup to CE Going Low Address Hold Time from CE Low Data Setup to CE Going High Data Hold Time from CE High Output Enable Setup Time
(1)
Parameter Symbol JEDEC tAVAV tAVEL tELAX tDVEH tEHDX
90ns Min 90 0 45 45 0 0 0 10 Max
120ns Min 120 0 50 50 0 0 0 10 0 0 0 50 20 8 Max
150ns Min 150 0 50 50 0 0 0 10 0 0 0 50 20 8 Max Units ns ns ns ns ns ns ns ns ns ns ns ns ns s 15 Sec
Symbol Standard tWC tAS tAH tDS tDH tOES Read Toggle Bit I and Data Polling tOEH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2
Output Enable Hold Time (1) Read Recover Time Before Write (OE High to WE Low) CE Setup Time from WE Low WE Hold Time from CE High WE Pulse Width WE Pulse Width High Byte Programming Operation Sector Erase Operation
Notes: 1. Not 100% tested.
tGHEL tWLEL tEHWH tELEH tELEL tWHWH1 tWHWH2
0 0 0 45 20 8 15
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Test Circuit
Test Configuration Component Values Test Configuration
VCC
CL (pF) 50 50
R1 () 990 580
R2 () 770 390
3.3V Standard Test 5V Standard Test
R1
Device Under Test CL R2
OUT
NOTES: CL includes jig capacitance.
Parameter Input Pulse Level Input Rise and Fall Input and Output Timing Reference Level
Typical 0 - 3.0 5 1.5
Units V ns V
AC Waveforms for Write and Erase Operations, WE Controlled
3rd Bus Cycle Data Polling PA tAS tAH PA tRC
Addresses
5555H tWC
CE
tGHWL
OE
tWP tWHWH1
WE
tCS
tWPH tDH tOE PD DQ7 DOUT tOH tCE tDF
Data
tDS
AOH
+5 Volt
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Waveforms for Write and Erase Operations, CE Controlled
Data Polling
Addresses
5555H tWC
PA tAS tAH
PA
WE
tGHEL
OE
tCP tWHWH1
CE
tWS
tCPH tDH
Data
tDS
AOH
PD
DQ7
DOUT
+5 Volt
AC Waveform For Read Operations
tRC
Addresses
tACC
Addresses Stable
CE
tDF tOE
OE
tOEH
WE
tCE tOH
Outputs
High Z
Output Valid
High Z
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
Pin Numbers & Functions 68 Pins -- Dual-Cavity CQFP (Standard Configuration)
Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Function GND CE3 A5 A4 A3 A2 A1 A0 RESET I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 Pin # 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Function GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 VCC A11 A12 A13 A14 A15 A16 CE1 Pin # 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 Function OE CE2 A17 RY/BY NC NC A18 A19 A20 I/O31 I/O30 I/O29 I/O28 I/O27 I/O26 I/O25 I/O24 Pin # 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 Function GND I/O23 I/O22 I/O21 I/O20 I/O19 I/O18 I/O17 I/O16 VCC A10 A9 A8 A7 A6 WE CE4
Consult Factory for Special order (Optional Configuration): Pin 38 - WE2, Pin 39 - WE3, Pin 40 - WE4 and Pin 67 - WE1
"F18" -- CQFP Package
.990 SQ .010 .940 SQ .009 .140 MAX Pin 61 Pin 60 .008 .002 .040 .015 .002 .900 SQ REF .640 SQ REF Metal spacer .010 .008 .015 .002
Pin 9 Pin 10
Detail "A"
Pin 26 Pin 27 .800 REF
Pin 44 Pin 43 See Detail "A"
All dimensions in inches
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
CIRCUIT TECHNOLOGY
Ordering Information
Model Number
ACT-F2M32A-090F18C ACT-F2M32A-120F18C ACT-F2M32A-150F18C ACT-F2M32A-090F18I ACT-F2M32A-120F18I ACT-F2M32A-150F18I ACT-F2M32A-090F18M ACT-F2M32A-120F18M ACT-F2M32A-150F18M ACT-F2M32A-090F18Q ACT-F2M32A-120F18Q ACT-F2M32A-150F18Q
Screening
Commercial (0C to +70C) Commercial (0C to +70C) Commercial (0C to +70C) Industrial (-40C to +85C) Industrial (-40C to +85C) Industrial (-40C to +85C) Military (-55C to +125C) Military (-55C to +125C) Military (-55C to +125C) DESC Drawing Pending MIL-PRF-38534 Compliant DESC Drawing Pending MIL-PRF-38534 Compliant DESC Drawing Pending MIL-PRF-38534 Compliant
Speed 90 ns 120 ns 150 ns 90 ns 120 ns 150 ns 90 ns 120 ns 150 ns 90 ns 120 ns 150 ns
Package
CQFP CQFP CQFP CQFP CQFP CQFP CQFP CQFP CQFP CQFP CQFP CQFP
Part Number Breakdown
ACT- F 2M 32 A- 090 F18 M
Aeroflex Circuit Technology Memory Type S = SRAM F = FLASH EEPROM E = EEPROM D = Dynamic RAM Memory Depth, Locations Memory Width, Bits Pinout Options A = One WE, RY/BY access on Pin 38 - Standard pinout C = Four WE's & RY/BY internally tied - Optional pinout Memory Speed, ns (+5V VCC) Specifications subject to change without notice Screening C = Commercial Temp, 0C to +70C I = Industrial Temp, -40C to +85C T = Military Temp, -55C to +125C M = Military Temp, -55C to +125C, Screened * Q = MIL-PRF-38534 Compliant/SMD if applicable Package Type & Size Surface Mount Packages F18 = .94" SQ 68 Lead\Dual-Cavity CQFP
* Screened to the individual test methods of MIL-STD-883
Aeroflex Circuit Technology 35 South Service Road Plainview New York 11830 www.aeroflex.com/act1.htm
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